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Category: Physica B: Condensed Matter

Simultaneously-doping of HfO<sub>2</sub> thin films by Ni with sputtering technique and effect of post annealing on structural and electrical properties

Simultaneously-doping of HfO<sub>2</sub> thin films by Ni with sputtering technique and effect of post annealing on structural and electrical properties

Publication date: Available online 3 June 2023Source: Physica B: Condensed MatterAuthor(s): Abdullah Akkaya, Osman Kahveci, Bünyamin Şahin, Enise Ayyıldız

Elastic, anisotropic, lattice dynamics and electronic properties of XNiM and XNi<sub>2</sub>M (X = Ti, Zr, Hf; M = Sn, Ge, Si): DFT comparison study

Elastic, anisotropic, lattice dynamics and electronic properties of XNiM and XNi<sub>2</sub>M (X = Ti, Zr, Hf; M = Sn, Ge, Si): DFT comparison study

Publication date: Available online 1 June 2023Source: Physica B: Condensed MatterAuthor(s): Edward Tindibale, Mulwa Winfred, Bamidele I. Adetunji

First principles study of structural and optoelectronic characteristics of wurtzite Zn<sub>1-<em>x</em>-<em>y</em></sub>Be<sub><em>x</em></sub>Mg<sub><em>y</em></sub>O quaternary alloys closely lattice matched to the ZnO substrate for UV-A optoelectronic applications

First principles study of structural and optoelectronic characteristics of wurtzite Zn<sub>1-<em>x</em>-<em>y</em></sub>Be<sub><em>x</em></sub>Mg<sub><em>y</em></sub>O quaternary alloys closely lattice matched to the ZnO substrate for UV-A optoelectronic applications

Publication date: Available online 1 June 2023Source: Physica B: Condensed MatterAuthor(s): Debankita Ghosh, Manish Debbarma, Surya Chattopadhyaya

Simultaneous effects of hydrostatic pressure and temperature on the electronic spectrum in the presence of a single off-center donor atom in a hemi-quantum ring

Simultaneous effects of hydrostatic pressure and temperature on the electronic spectrum in the presence of a single off-center donor atom in a hemi-quantum ring

Publication date: Available online 1 June 2023Source: Physica B: Condensed MatterAuthor(s): R. Boussetta, O. Mommadi, S. Chouef, L. Belamkadem, M. Hbibi, A. El Moussaouy, J.A. Vinasco, C.A. Duque, A. Kerkour El-Miad

Origin of frequency and voltage dependent negative dielectric properties in the Al/p-Si Schottky diodes with (Cd<sub>0.3</sub>Zn<sub>0.7</sub>O) interfacial layer in the wide range of frequency and voltage

Origin of frequency and voltage dependent negative dielectric properties in the Al/p-Si Schottky diodes with (Cd<sub>0.3</sub>Zn<sub>0.7</sub>O) interfacial layer in the wide range of frequency and voltage

Publication date: Available online 31 May 2023Source: Physica B: Condensed MatterAuthor(s): N. Delen, S. Altındal Yerişkin, A. Özbay, İ. Taşçıoğlu