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Category: Current Applied Physics

Physical model of a local threshold voltage shift in InGaZnO thin-film transistors under current stress for instability-aware circuit design

Physical model of a local threshold voltage shift in InGaZnO thin-film transistors under current stress for instability-aware circuit design

Publication date: Available online 1 December 2022Source: Current Applied PhysicsAuthor(s): Tae Jun Yang, Je-Hyuck Kim, Jung Rae Cho, Hee Jun Lee, Kyungmin Kim, Jaewon Park, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Changwook Kim, Dong-Wook Park, Dae…

Effect of annealing temperature on resistive switching behavior of Al/ La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> /LaNiO<sub>3</sub> devices

Effect of annealing temperature on resistive switching behavior of Al/ La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> /LaNiO<sub>3</sub> devices

Publication date: Available online 30 November 2022Source: Current Applied PhysicsAuthor(s): Juanfei Li, Lei Wu, Mingyu Ma, Ruifeng Song, Chunhui Dong, Junfang Wei, Jinsheng Li, Xiaoqiang Wang, Mingya Li

Investigation of ion-induced etch damages on trench surface of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> in high density Ar/SF<sub>6</sub> plasma

Investigation of ion-induced etch damages on trench surface of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> in high density Ar/SF<sub>6</sub> plasma

Publication date: Available online 17 November 2022Source: Current Applied PhysicsAuthor(s): Jaemin Song, Myeonggeon Lee, Sangwon Ryu, Yunchang Jang, Seolhye Park, Gon-Ho Kim