Browsed by
Month: January 2023

From the Nash–Kuiper theorem of isometric embeddings to the Euler equations for steady fluid motions: Analogues, examples, and extensions

From the Nash–Kuiper theorem of isometric embeddings to the Euler equations for steady fluid motions: Analogues, examples, and extensions

Journal of Mathematical Physics, Volume 64, Issue 1, January 2023. Direct linkages between regular or irregular isometric embeddings of surfaces and steady compressible or incompressible fluid dynamics are investigated in this paper. For a surface (M, …

Closed string radiation from the interaction of the moving D<math xmlns:mml=”http://www.w3.org/1998/Math/MathML” display=”inline” id=”d1e22″ altimg=”si4.svg” class=”math”><mi>p</mi></math>-branes with background fields

Closed string radiation from the interaction of the moving D<math xmlns:mml=”http://www.w3.org/1998/Math/MathML” display=”inline” id=”d1e22″ altimg=”si4.svg” class=”math”><mi>p</mi></math>-branes with background fields

Publication date: Available online 24 January 2023Source: Annals of PhysicsAuthor(s): Hamidreza Daniali, Davoud Kamani

Field dependent energy density and induced relaxor ferroelectric to relaxor antiferroelectric property investigation in potassium modified NKBT – ST ceramics

Field dependent energy density and induced relaxor ferroelectric to relaxor antiferroelectric property investigation in potassium modified NKBT – ST ceramics

Publication date: Available online 24 January 2023Source: Physica B: Condensed MatterAuthor(s): Jyothi R, K.S.K.R. Chandra Sekhar, M.L.V. Mahesh, Deepash Shekhar Saini, K. Chandra Mouli, Y. Rama Krishna, Patri Tirupathi

Formation of a-type dislocations near the InGaN/GaN interface during post-growth processing of epitaxial structures

Formation of a-type dislocations near the InGaN/GaN interface during post-growth processing of epitaxial structures

Journal of Applied Physics, Volume 133, Issue 4, January 2023. Cross-sectional transmission electron microscopy studies often reveal a-type dislocations located either below or above the interfaces in InGaN/GaN structures deposited along the [0001] dir…