CrystEngComm
Influence of pressure on AlN thick films prepared by epitaxial lateral overgrowth through hydride vapor phase epitaxy
CrystEngComm, 2024, Advance ArticleDOI: 10.1039/D3CE01300F, PaperMinghao Chen, Chunlei Fang, Qian Zhang, Zhijie Shen, Jianli Ji, Shuxin Tan, Yong Lu, Ting Liu, Jicai ZhangSmooth and crack-free (0002) AlN thick films (∼30 μm) were epitaxially grown on t…