Information-theoretic measures for states of a H atom (with and , where n and l denote principal and angular momentum quantum numbers) have been investigated within a quantum dot by utilizing the Ritz variational principle, with the help of a Slater-ty…
Focusing on the noble gases, we calculate the scattering potential using the Dirac–Coulomb Hamiltonian supplemented with a model polarization potential. We determine the scattering lengths using two methods, namely phase shifts for very small scatterin…
This paper presents a detailed study of low energy positron scattering from formic acid, examining elastic scattering, electronic excitation and ionisation processes. Through detailed comparisons with previous experimental and theoretical data, it is c…
Radio frequency antennas based on Rydberg atom vapor cells can in principle reach sensitivities beyond those of any conventional wire antenna, especially at lower frequencies where very long wires are needed to accommodate the increasing wavelength. Th…
Recently, the Au–B covalent bonds in gold doped boron clusters has attracted great attention. However, there are fewer theoretical reports on exploration their ground state structures and stabilities, especially for the medium sizes. Here, we study the…
Probing and manipulating of 2D materials and their heterostructures using slow highly charged ions (HCIs) is currently a hot topic due to the ultimate surface sensitivity of electronic sputtering with profound implications for fundamental research and …
Cross sections and rate coefficients for the dissociative recombination (DR) of the NS+ ion induced by collisions with low-energy electrons are reported for temperatures between 10 and 1000 K, relevant to a large range of interstellar cloud temperature…
Cross sections and rate coefficients for the dissociative recombination (DR) of the NS+ ion induced by collisions with low-energy electrons are reported for temperatures between 10 and 1000 K, relevant to a large range of interstellar cloud temperature…
Si is an important semiconductor material in the development of modern industry. With the miniaturization trend of semiconductor devices, the size of Si has reached the cluster size. The search for stable Si clusters is an important issue. In this work…